Junction Field‐Effect Transistors Based on PdSe2/MoS2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity. (4th September 2021)
- Record Type:
- Journal Article
- Title:
- Junction Field‐Effect Transistors Based on PdSe2/MoS2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity. (4th September 2021)
- Main Title:
- Junction Field‐Effect Transistors Based on PdSe2/MoS2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity
- Authors:
- Wang, Haoyun
Li, Zexin
Li, Dongyan
Xu, Xiang
Chen, Ping
Pi, Lejing
Zhou, Xing
Zhai, Tianyou - Abstract:
- Abstract: 2D materials have shown great promise for next‐generation high‐performance photodetectors. However, the performance of photodetectors based on 2D materials is generally limited by the tradeoff between photoresponsivity and photodetectivity. Here, a novel junction field‐effect transistor (JFET) photodetector consisting of a PdSe2 gate and MoS2 channel is constructed to realize high responsivity and high detectivity through effective modulation of top junction gate and back gate. The JFET exhibits high carrier mobility of 213 cm 2 V −1 s −1 . What is more, the high responsivity of 6 × 10 2 A W −1, as well as the high detectivity of 10 11 Jones, are achieved simultaneously through the dual‐gate modulation. The high performance is attributed to the modulation of the depletion region by the dual‐gate, which can effectively suppress the dark current and enhance the photocurrent, thereby realizing high detectivity and responsivity. The JFET photodetector provides a new approach to realize photodetectors with high responsivity and detectivity. Abstract : A junction field‐effect transistor (JFET) photodetector based on PdSe2 /MoS2 is demonstrated with high responsivity (6 × 10 2 A W −1 ) and high detectivity (10 11 Jones), which is realized by effective dual‐gate modulation. The JFET photodetector provides a new approach to realize photodetectors with high responsivity and detectivity.
- Is Part Of:
- Advanced functional materials. Volume 31:Number 49(2021)
- Journal:
- Advanced functional materials
- Issue:
- Volume 31:Number 49(2021)
- Issue Display:
- Volume 31, Issue 49 (2021)
- Year:
- 2021
- Volume:
- 31
- Issue:
- 49
- Issue Sort Value:
- 2021-0031-0049-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-09-04
- Subjects:
- junction field‐effect transistors -- photodetectors -- tunable optoelectronics -- two‐dimensional materials -- van der Waals heterostructures
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202106105 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 19977.xml