Simulation of Nitrogen Indiffusion and Its Impact on Silicon Wafer Strength. Issue 23 (30th July 2021)

• Record Type: Journal Article
• Authors: Müller, Timo; Kissinger, Gudrun; Kot, Dawid; Gehmlich, Michael; Boy, Michael; Vollkopf, Alexander; Sattler, Andreas; Miller, Alfred
• Other Names: Brehm Moritz guestEditor.; Springholz Gunther guestEditor.
• Is Part Of: Physica status solidi. Volume 218:Issue 23(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-07-30
• Subjects: nitrogen -- rapid thermal annealing -- simulations -- vacancies; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100210
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, the concentration profiles of nitrogen after nitriding rapid thermal annealing (RTA) of Si wafer surfaces are simulated. A model describing the fundamental partial differential equations for diffusion and interaction of nitrogen, vacancies, interstitials, and nitrogen vacancy (NV) complexes is used for this thermal process and the equations are solved simultaneously. In addition, thermal stress tests via intentionally induced stress due to the temperature gradient in an RTA process are conducted. By these wafer strength tests, which apply a controlled stress level, the relative slip robustness of wafers with nitrogen‐indiffused RTA and polished wafers are compared quantitatively. Abstract : Via Fourier transform infrared spectroscopy, concentration profiles of nitrogen after nitriding rapid thermal annealing (RTA) of Si wafer surfaces are simulated and measured. The model describes the fundamental partial differential equations for diffusion and interaction of the main point defect species. Thermal stress tests show an increase of the slip robustness by ≈50% compared to a non‐nitrided polished wafer.