Effects of Novel Material Field Effect Transistor for Heterogeneous Energy and Traffic-Aware Secure Applications. (13th October 2021)

• Record Type: Journal Article
• Authors: Ambika Bhuvaneswari, C.; Kanmani Ruby, E. D.; Manjunathan, A.; Balamurugan, R.; Jenopaul, P.; Tizazu, Belachew Zegale
• Other Names: Chelladurai Samson Jerold Samuel Academic Editor.
• Is Part Of: Advances in materials science and engineering. Volume 2021(2021)
• Publication Date: 2021-10-13
• Subjects: Materials science -- Periodicals; Materials science; Periodicals; 620.11
• DOI: 10.1155/2021/9085854
• Languages: English
• ISSNs: 1687-8434

Abstract

Abstract : The advent of the automated technological revolution has enabled the Internet of Things to rejuvenate, revolutionize, and redeem the services of sensors. The recent development of microsensor devices is distributed in a real-world terrestrial environment to sense various environmental changes. The energy consumption of the remotely deployed microsystems depends on its utilization efficiency. Improper utilization of sensor nodes' heterogeneity could lead to uneven energy consumption and load imbalance across the network, which will degrade the performance of the network. The proposed heterogeneous energy and traffic aware (HETA) considers the key parameters such as delay, throughput, traffic load, energy consumption, and life span. The residual energy and a minimum distance between the base station and cluster members are taken into consideration for the cluster head selection. The probability of hitting data traffic has been utilized to analyse energy and traffic towards the base station. The role of the sensor node has been realized and priority-based data forwarding are also proposed. As a result, the heterogeneous energy and traffic aware perform well in balancing traffic towards the base station, which is analysed in terms of maximum throughput and increase in a lifetime of heterogeneous energy networks more than 5000 rounds, and the algorithm outperforms 34.5% of nodes are alive with transmissible energy. The proposed research also endorses unequal clustering and minimum energy consumption. We have modeled our proposed research using various p-type junctionless nanowire FET without doping injunctions. The materials used in this analysis were silicon (Si), germanium (Ge), indium phosphide (InP), gallium arsenide (GaAs), and Al(x)Ga(1− x )As. The dimensions of the p-type cylindrical nanowire channel were 25 nm long and 10 nm in diameter.