Erratum: Titanium Nitride Sensing Film-Based Extended-Gate Field-Effect Transistor for Chemical/Biochemical Sensing Applications [J. Electrochem. Soc., 168, 107510 (2021)]. Issue 11 (22nd November 2021)

Record Type:: Journal Article
Title:: Erratum: Titanium Nitride Sensing Film-Based Extended-Gate Field-Effect Transistor for Chemical/Biochemical Sensing Applications [J. Electrochem. Soc., 168, 107510 (2021)]. Issue 11 (22nd November 2021)
Main Title:: Erratum: Titanium Nitride Sensing Film-Based Extended-Gate Field-Effect Transistor for Chemical/Biochemical Sensing Applications [J. Electrochem. Soc., 168, 107510 (2021)]
Authors:: Kumar, Dhirendra
Jit, Satyabrata
Sinha, Soumendu
Sharma, Rishi
Mukhiya, Ravindra
Abstract:
Is Part Of:: Journal of the Electrochemical Society. Volume 168:Issue 11(2021)
Journal:: Journal of the Electrochemical Society
Issue:: Volume 168:Issue 11(2021)
Issue Display:: Volume 168, Issue 11 (2021)
Year:: 2021
Volume:: 168
Issue:: 11
Issue Sort Value:: 2021-0168-0011-0000
Page Start:
Page End:
Publication Date:: 2021-11-22
Subjects:: Electrochemistry -- Periodicals
541.3705
Journal URLs:: https://iopscience.iop.org/journal/1945-7111?gclid=EAIaIQobChMI4Y-UmqGC7wIVFeDtCh0VQAo7EAAYASAAEgLW8_D_BwE ↗
DOI:: 10.1149/1945-7111/ac34d1 ↗
Languages:: English
ISSNs:: 0013-4651
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library HMNTS - ELD Digital store
Ingest File:: 19855.xml