Occurrence forms of major impurity elements in silicon carbide. Issue 1 (1st January 2022)

• Record Type: Journal Article
• Authors: Feng, Dong; Qin, Zhaobo; Ren, Quanxing; Sun, Shihao; Xia, Qian; Ru, Hongqiang; Wang, Wei; Ren, Shiyuan; Zhang, Cuiping
• Is Part Of: Ceramics international. Volume 48:Issue 1(2022)
• Page Start: 205
• Page End: 211
• Publication Date: 2022-01-01
• Subjects: Occurrence forms -- Impurity elements -- SiC powders; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2021.09.095
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: In this study, the forms of occurrence of impurity elements in silicon carbide (SiC) with different particle sizes were systematically investigated using a combination of X-ray diffraction (XRD), inductively coupled plasma-atomic emission spectrometry (ICP-OES), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The experimental results showed that in SiC powders prepared using the Acheson process, the contents of O, free-Si, free-C, and Fe impurities are high, and those of other trace impurity elements follow the order: Ti > Al > Ni > V. Moreover, O impurities mainly cover the SiC particle surface in the form of amorphous SiO2 . Fe impurities exist around SiC particles as Fe2 O3, Fex Siy, Fex Siy Tiz, and Fex Aly Siz phases. Impurity elements are often introduced during the smelting of SiC and/or during milling or subsequent storage.