The Impact of Contact Position on the Retention Performance in Thin‐Film Ferroelectric Transistors. Issue 22 (13th October 2021)

• Record Type: Journal Article
• Authors: Chen, Qiusong; Lin, Dong; Wang, Qinhao; Yang, Jiang; Sanchez, Juan E.; Zhu, Guodong
• Is Part Of: Physica status solidi. Volume 218:Issue 22(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-13
• Subjects: depletion layer electric field -- depolarization field -- ferroelectric thin-film transistors -- leakage current -- simulation; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100408
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Here, the simulation of the physical fields in an n‐type ferroelectric thin‐film transistor (FeTFT) with a bottom contact bottom‐gate configuration is demonstrated. In the off‐state, the intensity of the lateral electric field in the space charge region near the edge of the drain electrode is several times higher than the coercive field of the ferroelectric film, pinning the direction of polarization near the drain electrode along the channel. While the FeTFT switches from off‐state to on‐state, the vertical component of polarization near the drain edge is stronger than other parts near the channel. This enhances the depolarization field in this area so that the retention performance of the on‐state is worse than the off‐state. These results and methods benefit FeTFTs and are also valuable for floating‐gate memory and light‐emitting field‐effect transistors. Abstract : In ferroelectric thin‐film transistors (FeTFT) with bottom contact bottom‐gate configuration, intensity of lateral electric field near the edge of drain electrode can reach several times higher than the coercive field of the ferroelectric film in the off‐state. The depolarization field of this region is enhanced while the FeTFT switches from off‐state to on‐state.