Fabrication of Topological Insulator Bi2Se3−PbSe Heterojunction Photodetector for Infrared Detection. Issue 11 (24th September 2021)

• Record Type: Journal Article
• Authors: Ren, Yixuan; Li, Yuqi; Liu, Xingzhao
• Is Part Of: Physica status solidi. Volume 15:Issue 11(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-09-24
• Subjects: bismuth selenide -- heterojunctions -- lead selenide -- photodetectors -- topological insulators; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202100406
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : A van der Waals heterojunction is successfully constructed with topological insulator (TI) Bi2 Se3 and traditional narrow‐gap PbSe via molecular beam epitaxy. High‐quality crystallization and an atomically abrupt heterointerface between Bi2 Se3 and PbSe are observed in the Bi2 Se3 −PbSe heterojunction. Prominent photosensitivity in the infrared band is achieved with the as‐fabricated Bi2 Se3 −PbSe photodetector. Under zero bias, responsivity and detectivity are 3.9 A W −1 and 8.7 × 10 11 cm Hz 0.5 W −1, respectively. With a response time of several milliseconds, fast response speed is also achieved. Prominent photosensitivity and fast response speed together suggest that the construction of TI Bi2 Se3 −PbSe heterojunction is a promising solution to fabricate high‐performance infrared photodetector. Abstract : The Bi2 Se3 −PbSe van der Waals heterojunction photodetector is fabricated, in which merits from Bi2 Se3 and PbSe function collaboratively. Prominent photovoltaic sensitivity and fast response speed are both achieved in the infrared band. Heterojunction devices fabricated by combining topological insulators and traditional semiconductors are thus confirmed as a potential solution to broaden their application prospects.