Electromagnetic modelling and analysis of RF MEMS capacitive shunt switch for 5G applications. (November 2021)

• Record Type: Journal Article
• Authors: Chand, Ch Gopi; Maity, Reshmi; K, Srinivasa Rao; Maity, N.P.
• Is Part Of: Microelectronics journal. Volume 117(2021)
• Publication Date: 2021-11
• Subjects: RF MEMS Shunt switch -- RF-Performance (return, insertion loss and isolation) -- HFSS Tool; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2021.105262
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: This paper presents the Electromagnetic modelling and simulation analysis of an RF MEMS Shunt switch. The S parameters are investigated with different analysis such as changing beam structure, materials, thickness of the beam, and signal dielectric. The pull-in voltage of the proposed switch is obtained as 1.9 V. The RF-performance mainly depends on the up and down state of the switch, these analysis are done in the ANSYS HFSS simulator tool. The evaluated return and insertion losses are −44.7486 dB and −0.9598 dB, and the switch exhibits a good isolation of −49.1809 dB at 43 GHz frequency. RF-Performance is obtained at 26–45 GHz range. So, the proposed switch can be applicable for 5G applications.