Cite
HARVARD Citation
Roy, S. et al. (2021). In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition. Advanced Electronic Materials. p. n/a. [Online].
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Roy, S. et al. (2021). In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition. Advanced Electronic Materials. p. n/a. [Online].