High performance near-infrared phototransistors via enhanced electron trapping effect. Issue 91 (1st November 2021)

• Record Type: Journal Article
• Authors: Jiang, Xingyu; Lu, Jie; Xue, Di; Wei, Yujia; Zhang, Yadan; Zhang, Jidong; Wang, Zi; Huang, Lizhen; Chi, Lifeng
• Is Part Of: Chemical communications. Volume 57:Issue 91(2021)
• Page Start: 12123
• Page End: 12126
• Publication Date: 2021-11-01
• Subjects: Chemistry -- Periodicals; 540
• DOI: 10.1039/d1cc04828g
• Languages: English
• ISSNs: 1359-7345

Abstract

Abstract : A high performance near-infrared organic phototransistor with photoresponsivity of 2000 A W −1 and detectivity of 10 16 Jones is achieved via introducing a small molecule acceptor as an electron trapping site. Abstract : A high performance near-infrared organic phototransistor is achieved via introducing a small molecule acceptor as an electron trapping site into the narrow-bandgap conjugated polymer films. With only 10% (wt) addition of the acceptor molecule, the photoresponse to light of 850 nm has been significantly improved with a best photoresponsivity up to 2000 A W −1, high detectivity of 10 16 Jones and fairly good photosensitivity in the order of 10 6 .