Facet-dependent electrical conductivity properties of GaN wafers. Issue 42 (26th October 2021)

• Record Type: Journal Article
• Authors: Hsieh, Pei-Lun; Kumar, Gautam; Wang, Yen-Yu; Lu, Yu-Jung; Chen, Lih-Juann; Huang, Michael H.
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 42(2021)
• Page Start: 15354
• Page End: 15358
• Publication Date: 2021-10-26
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d1tc04219j
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : A large conductivity difference exists between the {0001} and {101̄0} faces of a GaN wafer. Current-rectifying I – V curves were obtained with electrodes contacting both faces simultaneously. Abstract : An intrinsic {0001} GaN wafer cut to expose the {101̄0}/{1̄100} side faces allows examination of its conductivity properties with respect to the crystal faces. Interestingly, the {101̄0} face shows a 10-fold higher photoluminescence peak intensity than the {0001} face. The {0001} face is 60-fold more conductive at 6 V than the {101̄0} face, demonstrating the presence of an electrical facet effect. The conductivity difference can be rationalized assuming different degrees of band bending at these crystal surfaces. Asymmetric I – V curves were obtained with electrical connections made to both faces simultaneously, showing the potential of using this behavior to fabricate transistors.