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HARVARD Citation
Liu, K. et al. (2021). 490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics. Solid-state electronics. p. . [Online].
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Liu, K. et al. (2021). 490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics. Solid-state electronics. p. . [Online].