Cite
HARVARD Citation
Xia, S. et al. (2021). A dislocation-driven laminated relaxation process in Si1−xGex grown on Si (001) by molecular beam epitaxy. Materials today nano. p. . [Online].
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Xia, S. et al. (2021). A dislocation-driven laminated relaxation process in Si1−xGex grown on Si (001) by molecular beam epitaxy. Materials today nano. p. . [Online].