Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine. Issue 42 (5th October 2021)

• Record Type: Journal Article
• Authors: Parkhomenko, Roman G.; De Luca, Oreste; Kołodziejczyk, Łukasz; Modin, Evgeny; Rudolf, Petra; Martínez Martínez, Diego; Cunha, Luis; Knez, Mato
• Is Part Of: Dalton transactions. Volume 50:Issue 42(2021)
• Page Start: 15062
• Page End: 15070
• Publication Date: 2021-10-05
• Subjects: Chemistry, Inorganic -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Chemistry, Inorganic -- Periodicals; 546.05
• DOI: 10.1039/d1dt02529e
• Languages: English
• ISSNs: 1477-9226

Abstract

Abstract : Amorphous AlN films grown from TMA and MMH were obtained and investigated. The amount of impurities varied from 3 to 9 at% for carbon, and 4 to 12 at% for oxygen. The values of mechanical characteristics were ∼14 GPa (hardness) and ∼164 GPa (Young's modulus). Abstract : The great interest in aluminium nitride thin films has been attributed to their excellent dielectric, thermal and mechanical properties. Here we present the results of amorphous AlN films obtained by atomic layer deposition. We used trimethylaluminum and monomethylhydrazine as the precursors at a deposition temperature of 375–475 °C. The structural and mechanical properties and chemical composition of the synthesized films were investigated in detail by X-ray diffraction, X-ray photoelectron spectroscopy, electron and probe microscopy and nanoindentation. The obtained films were compact and continuous, exhibiting amorphous nature with homogeneous in-depth composition, at an oxygen content of as low as 4 at%. The mechanical properties were comparable to those of AlN films produced by other techniques.