Systematic Design and Demonstration of Multi‐Bit Generation in Layered Materials Heterostructures Floating‐Gate Memory (Adv. Funct. Mater. 43/2021). (20th October 2021)

• Record Type: Journal Article
• Authors: Gwon, Oh Hun; Kim, Jong Yun; Kim, Han Seul; Kang, Seok‐Ju; Byun, Hye Ryung; Park, Min; Lee, Dong Su; Kim, Yoon‐jeong; Ahn, Seokhoon; Kim, Jaekyung; Cho, Sang‐Joon; Yu, Young‐Jun
• Is Part Of: Advanced functional materials. Volume 31:Number 43(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-20
• Subjects: 2D materials -- floating gate memory -- hBN thickness -- multi‐bit generation map -- multi‐bit memory; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202170317
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Floating‐Gate Memory In article number 2105472, Young‐Jun Yu and co‐workers systematically design and demonstrate multiple bits on non‐volatile memory based on vdW heterostructure floating‐gate memory (FGM) by tuning the dimensions of the 2D materials. A fingerprint mechanism is established that links the bit number and dimensions of 2D crystals on vdW heterostructures. This approach could enable the precise generation of the desired number of bits in layered‐material‐based vdW FGMs.