The synthesis and formation mechanism of nonpolar InN nanoplates. Issue 35 (20th August 2021)

• Record Type: Journal Article
• Authors: Song, Wenqing; Li, Tao; Zhang, Lei; Zhu, Wenhui; Wang, Liancheng
• Is Part Of: CrystEngComm. Volume 23:Issue 35(2021)
• Page Start: 5976
• Page End: 5981
• Publication Date: 2021-08-20
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/d1ce00981h
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : High-crystal-quality nonpolar indium nitride (InN) nanoplates were synthesized via deploying controllable chemical vapor deposition (CVD) technology using the M -plane of GaN nanowires (NWs) as a template. Abstract : High-crystal-quality nonpolar indium nitride (InN) nanoplates were synthesized via deploying controllable chemical vapor deposition (CVD) technology using the M -plane of GaN nanowires (NWs) as a template, with features creating a potential advantage for their use in terahertz emitter/detector devices. The formation of the 2D InN nanosheets may have been due to self-limiting epitaxial growth, which is in turn explained by lattice induction theory and surface distortion effects.