Interfacial modification of perovskite solar cells via Cs2CO3: Computational and experimental approach. (1st November 2021)

• Record Type: Journal Article
• Authors: Raoui, Yassine; Pegu, Meenakshi; Kazim, Samrana; Ahmad, Shahzada
• Is Part Of: Solar energy. Volume 228(2021)
• Page Start: 700
• Page End: 705
• Publication Date: 2021-11-01
• Subjects: Perovskite solar cell -- Interface engineering -- SnO2 -- Cs2CO3 -- Drift-diffusion simulation; Solar energy -- Periodicals; Solar engines -- Periodicals; 621.47
• DOI: 10.1016/j.solener.2021.10.004
• Languages: English
• ISSNs: 0038-092X

Abstract

Highlights: Interfacial modification of perovskite solar cells using computational and experimental approach. Interfacial modification of perovskite solar cells via Cs2 CO3. Low-temperature processed passivating agent at SnO2 /(FAPbI3 )0.85 (MAPbBr3 )0.15 interface. Drift-diffusion simulation. Impact of defect density ( N t ) at SnO2 /(FAPbI3 )0.85 (MAPbBr3 )0.15 interface. Advantages of spike structure at SnO2 /(FAPbI3 )0.85 (MAPbBr3 )0.15 interface. Abstract: Interfacial materials in perovskite solar cells (PSCs) between the absorber layer and charge selective layers are stimulants to boost performance and stability. Incorporation of a low-temperature processed passivating agent at electron selective layer/perovskite interface can enhance the performance of PSCs; however, the interface at SnO2 /(FAPbI3 )0.85 (MAPbBr3 )0.15 suffers from surface phenomena that retard the overall performance of the PSCs. By adopting a synergistic approach, drift–diffusion simulation, and experimental validation, we unravel the interaction of the passivation layer at the electron selective layer/perovskite. Firstly, we elucidated the impact of defect density ( N t ) at electron selective layer/perovskite and the conduction band of SnO2 using drift–diffusion simulation to yield a power conversion efficiency of 23.18 %. Secondly, we validate the simulation trend experimentally by depositing the Cs2 CO3 passivation layer on the top of the electron selective layer. The impact of Cs2 CO3 on electro-optical properties, charge collection, and recombination rate at the interfaces of PSCs was unraveled. The PSC fabricated with Cs2 CO3 treatment achieves a higher open-circuit voltage, V oc ∼ 1090 mV. Our findings put forward a combinatorial protocol of drift–diffusion simulation and experimental studies to address the interfacial issues in PSCs.