A low-temperature route for producing epitaxial perovskite superlattice structures on (001)-oriented SrTiO3/Si substrates. Issue 38 (6th August 2021)

• Record Type: Journal Article
• Authors: Plokhikh, Aleksandr V.; Golovina, Iryna S.; Falmbigl, Matthias; Karateev, Igor A.; Vasiliev, Alexander L.; Lapano, Jason; Engel-Herbert, Roman; Spanier, Jonathan E.
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 38(2021)
• Page Start: 13115
• Page End: 13122
• Publication Date: 2021-08-06
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d1tc01988k
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3 deposited by hybrid molecular beam epitaxy. Abstract : We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3 deposited by hybrid molecular beam epitaxy. ALD film growth was carried out at 360 °C, which is significantly lower than the typical deposition temperatures for epitaxial perovskite thin films. The high control over the stacking sequence of different constituents is demonstrated in a series of (BaTiO3 ) m /(SrTiO3 ) n superlattices with various m / n cycle ratios. All superlattice structures were coherently strained to the virtual substrate layer of SrTiO3 on Si. Irrespective of the m/n superlattice sequence, SrTiO3 sublayers retain slight compressive strain which is transmitted to the BaTiO3 layers.