Bondability of ultrasonic Aluminum bonds on the molybdenum (de)selenide and molybdenum of back contact layer of copper indium gallium (de)selenide CIGS thin film photovoltaic solar panel. (1st November 2021)

• Record Type: Journal Article
• Authors: Basher, Hassan; Zulkifli, Muhammad Nubli; Rahmat, Mohd Khairil; Rahman, Muhammad Ghazali Abdul; Jalar, Azman; Daenen, Michael
• Is Part Of: Solar energy. Volume 228(2021)
• Page Start: 516
• Page End: 522
• Publication Date: 2021-11-01
• Subjects: CIGS solar panel -- Ultrasonic Al bond -- Contact resistance -- Peel strength -- Mo back contact -- MoSe2 layer; Solar energy -- Periodicals; Solar engines -- Periodicals; 621.47
• DOI: 10.1016/j.solener.2021.09.082
• Languages: English
• ISSNs: 0038-092X

Abstract

Highlights: A method of removing CIGS layers up until MoSe2 of TFPV using mechanical brushing and scribing was found to be plausible method before ultrasonic bonding application. Ultrasonic Al bond on Mo back contact layer has higher bondability as compared to that of ultrasonic Al bond on MoSe2 in terms of electrical (contact resistance) and mechanical (peel strength) performances. The creation of micro weld between ultrasonic Al bonds with Mo can be identified through the identification of failure modes from load-distance profile of peel test. Rigidity and stress distribution experienced during lamination process determine the panel construction CIGS TFPV selection. Abstract: This paper aims to study the bondability of ultrasonic Aluminum, Al bonds on Mo and MoSe2 layers of back-contact metal of copper indium gallium (de)selenide (CIGS) thin film photovoltaic (TFPV) solar panel. The bondability of ultrasonic Al bonds were evaluated based on the contact resistance, Rc, peel strength and electrical characteristics measured using transmission line method (TLM), peel test, and current–voltage (I-V) measurement, respectively. Besides, the qualitative results of load-distance profiles from tensile test also have been used to evaluate the bondability of the ultrasonic Al bonds. Two type of lamination constructions namely construction 1 and construction 2 were built on the CIGS TPFV solar panel with ultrasonic Al bonds on Mo and MoSe2 . It was noted that the new method of removing CIGS layer up until MoSe2 is the plausible technique to be used. Ultrasonic Al bond on Mo layer has higher bondability as compared to that of ultrasonic Al bond on MoSe2 through the quantitative results of Rc, peel strength and qualitative result of load-distance profile. CIGS TFPV solar panel with construction 2 is the suitable construction for the CIGS TFPV solar panel due to the higher rigidity, and even stress distribution experienced during lamination process as compared to that of construction 1. It is noted that steps taken from ultrasonic bonding until lamination process has increased the cumulative contact area and decreased the Rc and consequently increased the efficiency of CIGS TFPV solar panel with ultrasonic Al bond on MoSe2 layer.