Multiple channels to enhance near-infrared emission from SiO2–SnO2:Er3+ films by Ba2+ ion doping. Issue 41 (13th October 2021)

• Record Type: Journal Article
• Authors: Zhang, Yangyi; Wang, Lixiang; Chen, Jiaming; Hou, Guozhi; Li, Dongke; Xu, Jun; Xu, Ling; Chen, Kunji
• Is Part Of: Physical chemistry chemical physics. Volume 23:Issue 41(2021)
• Page Start: 23711
• Page End: 23717
• Publication Date: 2021-10-13
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/d1cp03059k
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : By doping Ba 2+ ions into a SiO2 –SnO2 :Er 3+ thin film, the NIR light emission of Er 3+ ions can be enhanced by about 12 times due to the increase of oxygen vacancies, the improved crystallinity and the strong cross-relaxation processes. Abstract : Ba 2+ ions co-doped SiO2 –SnO2 :Er 3+ thin films are prepared using a sol–gel method combined with a spin-coating technique and post-annealing treatment. The influence of Ba 2+ ion doping on the photoluminescence properties of thin films is carefully investigated. The enhancement of near-infrared (NIR) emission of Er 3+ ions by as much as 12 times is obtained via co-doping with Ba 2+ ions. To illustrate the relevant mechanisms, X-ray diffraction, X-ray photoelectron spectroscopy and comprehensive spectroscopic measurements are carried out. The enhanced NIR emission induced by Ba 2+ co-doping can be explained by more oxygen vacancies, improved crystallinity and strong cross-relaxation processes between Er 3+ ions. The incorporation of Ba 2+ ions into SiO2 –SnO2 :Er 3+ thin films results in a considerable enhancement in the NIR emission, making the thin films more suitable for Si-based optical lasers and amplifiers.