Reconfigurable 2D WSe2‐Based Memtransistor for Mimicking Homosynaptic and Heterosynaptic Plasticity. Issue 41 (16th September 2021)

• Record Type: Journal Article
• Authors: Ding, Guanglong; Yang, Baidong; Chen, Ruo‐Si; Mo, Wen‐Ai; Zhou, Kui; Liu, Yang; Shang, Gang; Zhai, Yongbiao; Han, Su‐Ting; Zhou, Ye
• Is Part Of: Small. Volume 17:Issue 41(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-09-16
• Subjects: 2D WSe 2 -- artificial synapses -- heterosynaptic plasticity -- homosynaptic plasticity -- memtransistors; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202103175
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: The mimicking of both homosynaptic and heterosynaptic plasticity using a high‐performance synaptic device is important for developing human‐brain–like neuromorphic computing systems to overcome the ever‐increasing challenges caused by the conventional von Neumann architecture. However, the commonly used synaptic devices (e.g., memristors and transistors) require an extra modulate terminal to mimic heterosynaptic plasticity, and their capability of synaptic plasticity simulation is limited by the low weight adjustability. In this study, a WSe2 ‐based memtransistor for mimicking both homosynaptic and heterosynaptic plasticity is fabricated. By applying spikes on either the drain or gate terminal, the memtransistor can mimic common homosynaptic plasticity, including spiking rate dependent plasticity, paired pulse facilitation/depression, synaptic potentiation/depression, and filtering. Benefitting from the multi‐terminal input and high adjustability, the resistance state number and linearity of the memtransistor can be improved by optimizing the conditions of the two inputs. Moreover, the device can successfully mimic heterosynaptic plasticity without introducing an extra terminal and can simultaneously offer versatile reconfigurability of excitatory and inhibitory plasticity. These highly adjustable and reconfigurable characteristics offer memtransistors more freedom of choice for tuning synaptic weight, optimizing circuit design, and building artificial neuromorphic computing systems. Abstract : The 2D WSe2 based memtransistor with high choice freedom can not only mimic homosynaptic plasticity by applying spikes on either the drain or gate terminal, but also can simulate heterosynaptic plasticity and has numerous merits: 1) no need for adding an extra modulation terminal, 2) versatile reconfigurability of excitatory and inhibitor, and 3) selectivity of input.