Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films. (December 2021)
- Record Type:
- Journal Article
- Title:
- Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films. (December 2021)
- Main Title:
- Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films
- Authors:
- Aziz, Jamal
Kim, Honggyun
Rehman, Shania
Hur, Ji-Hyun
Song, Yun-Heub
Khan, Muhammad Farooq
Kim, Deok-kee - Abstract:
- Highlights: The Poole-Frenkel induced threshold switching of the NbOx films is controlled by changing the oxygen content (x = 2.0 ∼ 2.5). The synthesis method is simple and low-cost. The films exhibit excellent uniformity. The films exhibit thermal stability upto 160°C. Abstract: In this study, we report the Poole-Frenkel induced threshold switching characteristics of niobium dioxide (NbO2 ) films by tuning oxygen stoichiometry. Similar to correlated oxides, NbO2 is also found sensitive to oxygen related defects. The oxygen stoichiometry of NbO2 films was varied by changing the oxygen flux during its synthesis in reactive RF-sputter. Nb2 O5 dominant phase of as-grown films was detected during Raman spectroscopy. For the reduction of Nb2 O5 films, we chose tungsten as a top electrode due to its considerable oxygen affinity. After the required forming process, stable threshold switching was observed which is attributed to the reduction of Nb2 O5 phase to NbO2 due to interfacial WOx layer formation between top electrode and Nb2 O5 . Increase of O2 flux during deposition leads to an increase in the selectivity, threshold voltage and off-state resistance. These devices showed good thermal stability up to 160 °C making them useful for RRAM and neuromorphic computing applications. Graphical abstract: Image, graphical abstract
- Is Part Of:
- Materials research bulletin. Volume 144(2021)
- Journal:
- Materials research bulletin
- Issue:
- Volume 144(2021)
- Issue Display:
- Volume 144, Issue 2021 (2021)
- Year:
- 2021
- Volume:
- 144
- Issue:
- 2021
- Issue Sort Value:
- 2021-0144-2021-0000
- Page Start:
- Page End:
- Publication Date:
- 2021-12
- Subjects:
- Threshold switching -- Poole-Frenkel conduction -- Oxygen stoichiometry -- Forming process -- Interfacial oxide layer
Materials -- Periodicals
Crystal growth -- Periodicals
Matériaux -- Périodiques
Cristaux -- Croissance -- Périodiques
Crystal growth
Materials
Periodicals
620.11 - Journal URLs:
- http://www.sciencedirect.com/science/journal/00255408 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.materresbull.2021.111492 ↗
- Languages:
- English
- ISSNs:
- 0025-5408
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.410000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 19613.xml