Reconfigurable 2D WSe2‐Based Memtransistor for Mimicking Homosynaptic and Heterosynaptic Plasticity (Small 41/2021). Issue 41 (14th October 2021)

• Record Type: Journal Article
• Authors: Ding, Guanglong; Yang, Baidong; Chen, Ruo‐Si; Mo, Wen‐Ai; Zhou, Kui; Liu, Yang; Shang, Gang; Zhai, Yongbiao; Han, Su‐Ting; Zhou, Ye
• Is Part Of: Small. Volume 17:Issue 41(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-14
• Subjects: 2D WSe 2 -- artificial synapses -- heterosynaptic plasticity -- homosynaptic plasticity -- memtransistors; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202170213
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : Memtransistors In article number 2103175, Ye Zhou and co‐workers utilize two‐dimensional WSe2 as channel material to fabricate a memtransistor for synaptic plasticity simulation. Benefitting from the multi‐terminal input and high adjustability, the memtransistor can mimic both homosynaptic and heterosynaptic plasticity without introducing an extra terminal and can simultaneously offer versatile reconfigurability of excitatory and inhibitory plasticity.