Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier. Issue 20 (7th September 2021)

• Record Type: Journal Article
• Authors: Jia, Chuanyu; He, Chenguang; Liang, Zhiwen; Wang, Qi
• Is Part Of: Physica status solidi. Volume 218:Issue 20(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-09-07
• Subjects: efficiency droop -- InGaN barrier -- radiative recombination rates; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100351
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : The influences of In‐component‐graded InGaN barrier on the performances of InGaN light emitting diodes (LEDs) are studied. The results show that LEDs with In‐component linearly graded InGaN barrier exhibit better performances of radiative recombination rate and efficiency droop than reference LED with constant‐In‐component InGaN barrier. At 150 mA, the external quantum efficiencies for LED A with constant‐In‐component InGaN barrier, LED B with the In‐component linearly increasing in the InGaN barrier, and LED C with the In‐component linearly decreasing in the InGaN barrier are 30.30%, 36.66%, and 34.03%, respectively. Among the three sets of LED samples, LED B, with the In‐component linearly increasing in the InGaN barrier, has the highest radiative recombination rate due to suppression of quantum confinement stark effect and enhancement of carrier confinement effect in the active layer. The efficiency droop for LED A, LED B, and LED C is 34.83%, 25.67%, and 16.67%, respectively. Analysis indicates that the efficiency droop is mainly determined by the hole injection efficiency and electron leakage from the active layer. LED C with the In‐component linearly decreasing in the InGaN barrier has the lowest efficiency droop due to improved hole injection efficiency and reduced electron leakage. Abstract : The influences of In‐component‐graded InGaN barrier on the performances of InGaN light emitting diodes (LEDs) are studied. The results show that LEDs with In‐component‐graded InGaN barrier exhibit better performances of radiative recombination rate and efficiency droop than reference LED with constant‐In‐component InGaN barrier due to suppression of quantum confinement stark effect, enhancement of carrier confinement effect, and hole injection efficiency.