High‐Quality Bulk β‐Ga2O3 and β‐(AlxGa1−x)2O3 Crystals: Growth and Properties. Issue 20 (3rd September 2021)

• Record Type: Journal Article
• Authors: Bauman, Dmitrii A.; Panov, Dmitrii Iu.; Zakgeim, Dmitrii A.; Spiridonov, Vladislav A.; Kremleva, Arina V.; Petrenko, Artem A.; Brunkov, Pavel N.; Prasolov, Nikita D.; Nashchekin, Alexey V.; Smirnov, Andrei M.; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.; Romanov, Alexey E.
• Is Part Of: Physica status solidi. Volume 218:Issue 20(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-09-03
• Subjects: Czochralski method -- gallium oxide -- power electronics; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100335
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : A method for the growth of high‐quality gallium oxide (β‐Ga2 O3 ) bulk crystals from the melt is developed. The influence of the atmosphere in the process zone on the stability of growth and the quality of Czochralski grown crystals is studied. The structural properties of the crystals obtained are investigated. Samples of gallium oxide substrates are demonstrated. The possibility of growing bulk crystals of solid‐solution oxides (Al x Ga1– x )2 O3 is tested. Abstract : Power electronics device performance improving is possible through the utilization of advanced materials, the most promising of which are β‐Ga2 O3 and β‐(Al x Ga1– x )2 O3 . Herein, the results of the development of technology for obtaining high‐quality β‐Ga2 O3 crystals for substrates formation and further device design are presented.