Crystallization of electron beam evaporated a-Si films on textured glass substrates by flash lamp annealing. (5th March 2019)

• Record Type: Journal Article
• Authors: Kurata, Keisuke; Ohdaira, Keisuke
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SB(2019)
• Publication Date: 2019-03-05
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/aafb51
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We investigate the crystallization of amorphous silicon (a-Si) films, by flash lamp annealing (FLA), formed by electron beam (EB) evaporation on textured glass substrates. We confirmed that EB-evaporated a-Si films formed on textured glass can be crystallized by FLA. Optical reflectance on EB-evaporated a-Si can be reduced by using the textured glass, leading to a reduction in the fluence of a FL pulse required for the crystallization. The fluence of a FL pulse for the crystallization of EB-evaporated a-Si films tends to increase with temperature during EB evaporation of a-Si films. The pre-existing crystal grains in precursor Si films may affect the mechanism of their crystallization. The usage of textured glass substrates leads the formation of polycrystalline Si (poly-Si) films with fine grains. This may result from the prevention of lateral thermal growth and the suppression of explosive crystallization (EC). Unlike in the case of the crystallization of EB-evaporated a-Si films on flat glass substrates, poly-Si films formed on textured glass substrates are not cracked. This may be due to the suppression of the emergence of EC.