Cite
HARVARD Citation
Yako, M. et al. (2019). Impact of interface recombination on direct-gap photoluminescence from Ge epitaxial layers on Si. Japanese journal of applied physics. p. . [Online].
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Yako, M. et al. (2019). Impact of interface recombination on direct-gap photoluminescence from Ge epitaxial layers on Si. Japanese journal of applied physics. p. . [Online].