Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer. (5th March 2019)

• Record Type: Journal Article
• Authors: Kwoen, Jinkwan; Lee, Joohang; Watanabe, Katsuyuki; Arakawa, Yasuhiko
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SB(2019)
• Publication Date: 2019-03-05
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/aaffc2
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The direct growth of a III–V compound semiconductor on Si(001) is an unsolved problem for monolithically integrated photonic devices on the Si platform. Here, we report the growth of a high-quality GaAs layer on on-axis Si(001) substrates by MBE. A single domain GaAs layer was grown on top of a AlGaAs nucleation layer on a Si(001) substrate. By optimizing the Al content of the nucleation layer, anti-phase domains were self-eliminated at the GaAs layer. This result represents a key step towards the realization of monolithically integration of III–V devices on the Si platform using direct epitaxial growth.