Characteristics of 9, 10-diphenylanthracene field-effect transistors obtained by exposing the silver electrodes to oxidative conditions. (22nd February 2019)

• Record Type: Journal Article
• Authors: Minagawa, Masahiro; Sone, Shinnosuke; Kobayashi, Kanta; Claus, Martin; Shinbo, Kazunari
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SB(2019)
• Publication Date: 2019-02-22
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/aafd8c
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Organic field-effect transistors (OFETs) containing a 9, 10-diphenylanthracene (DPA) layer were fabricated with oxidized silver (AgO x ) electrodes, and their electrical properties were investigated. The OFET structure consisted of heavily doped n-type Si wafers (SiO2 ) as the gate dielectric layer, fabricated silver source–drain electrodes oxidized by ultraviolet-ozone surface treatment, and finally the DPA layer. In spite of the large ionization potential of the DPA layer (∼5.8 eV), a high mobility (∼1.1 cm 2 V −1 s −1 )) was measured for OFETs with a AgO x layer oxidized for 600 s, which resulted in a reduction in the contact resistance to 8.0 kΩ cm. The observed behavior was attributed to the fact that the AgO x layer with its high oxidizability contributed to hole injection by oxidizing the surface of the DPA layer. Moreover, hole injection was more strongly enhanced by the presence of Ag2 O rather than AgO.