Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2/SiC (03̄38̄) interfaces. (22nd February 2019)

• Record Type: Journal Article
• Authors: Masuda, Takeyoshi; Hatakeyama, Tetsuo; Harada, Shinsuke; Yano, Hiroshi
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SB(2019)
• Publication Date: 2019-02-22
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/aafb55
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Low interface state density ( D it ) and high field-effect mobility ( μ fe ) at SiO2 /4H-SiC (0 3 ̄ 3 8 ̄ ) Metal-oxide-semiconductor (MOS) interfaces are known. In order to understand the behavior and the scattering mechanisms induced electrons in more detail, we fabricated the Hall-bar lateral MOSFETs on the 4H-SiC (0 3 ̄ 3 8 ̄ ) substrate with various channel doping concentrations and evaluated the trapped electron densities and the Hall mobilities by split capacitance–voltage and Hall-effect measurements. Our results demonstrated that more than 80% of the induced electrons at the SiO2 /4H-SiC MOS (0 3 ̄ 3 8 ̄ ) interfaces contribute to the current conduction as the free electrons. The majority of the electron traps seemed to be located mainly at the edge of the conduction band because the trapped electron density increased around the threshold voltage and was saturated in the high gate voltage region.