Cite
HARVARD Citation
Chao, D. et al. (2019). Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs. Japanese journal of applied physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Chao, D. et al. (2019). Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs. Japanese journal of applied physics. p. . [Online].