Cross-sectional observation in nanoscale for Si power MOSFET by atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy. (13th June 2019)

• Record Type: Journal Article
• Authors: Doi, Atsushi; Nakajima, Mizuki; Masuda, Sho; Satoh, Nobuo; Yamamoto, Hidekazu
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SI(2019)
• Publication Date: 2019-06-13
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab1642
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Scanning probe microscopy and corresponding evaluation methods enabled nanoscale observation of power semiconductor devices regardless of the material and structure types. We acquired cross-sectional images of a power metal-oxide-semiconductor field-effect transistor (MOSFET) with a Si superjunction (SJ) structure using a method integrating atomic force microscopy, Kelvin probe force microscopy, and scanning capacitance force microscopy. We obtained the internal structure, surface potential, and differential capacitance under the operation state by applying a bias voltage to the Si-SJ power MOSFET.