Defect-induced electronic structures on SnSe surfaces. (18th June 2019)

• Record Type: Journal Article
• Authors: Asakawa, Kanta; Oguro, Fumikazu; Yoshida, Yasuo; Sakai, Hideaki; Hanasaki, Noriaki; Hasegawa, Yukio
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SI(2019)
• Publication Date: 2019-06-18
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab147d
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Using a low-temperature scanning tunneling microscope (STM), we investigated the role of atomic-scale defects of a cleaved SnSe(100) surface on the electronic structure around them. We found in empty-state STM images that Sn vacancies induce dark contrast around them, proving their role as a p-type dopant. The vacancies are also accompanied with an X-shaped dark pattern reflecting the structural asymmetry of the terminating layer. In addition, in empty-state STM images, a 1 × 3 superstructure was observed around a bright-contrasted defect, which is presumed to be a defect-induced charge density wave driven by strong electron-phonon interaction.