Enhanced absorption and EQE of Si MSM photodiodes with integrated periodic arrays of holes. Issue 1 (September 2021)

• Record Type: Journal Article
• Authors: Gou, Jun; Xie, Zheyuan; Yu, He; Liu, Xianchao; Wang, Jun
• Is Part Of: IOP conference series. Volume 1186:Issue 1(2021)
• Publication Date: 2021-09
• Subjects: Materials science -- Periodicals; 620.1105
• DOI: 10.1088/1757-899X/1186/1/012003
• Languages: English
• ISSNs: 1757-8981

Abstract

Abstract: In order to enhance the absorption of thin Si film, cylindrical-shaped holes arranged in square and hexagonal lattices with different designs of hole diameter, depth and period are integrated in the surface of Si films with a thickness of 1.5 μm and 2.5 μm on either bulk Si or SOI substrate. At the wavelengths between 800 ~ 950 nm, light bending and absorption enhancement of Si film with integrated hole array is analyzed by FDTD simulation. Hole array with a period similar to the wavelength and a diameter/period ratio around 0.7 enables a higher absorption of Si film. Si film with cylindrical-shaped holes in hexagonal lattice with a Si thickness of 1.5 μm and a hole depth of 250 nm provides an absorption of 43.16 % at 850 nm wavelength on a SiO2 substrate. Nanostructured Si MSM photodiodes are fabricated by integrating periodic arrays of holes in 1.5 μm thin absorption regions between metal fingers. The EQE is enhanced to 61 % at 850 nm, while the photodiodes without holes show only 23 %.