Nanoscale and quantum engineering of III-nitride heterostructures for high efficiency UV-C and far UV-C optoelectronics. (12th October 2021)

• Record Type: Journal Article
• Authors: Liu, Xianhe; Pandey, Ayush; Mi, Zetian
• Is Part Of: Japanese journal of applied physics. Volume 60:Number 11(2021)
• Publication Date: 2021-10-12
• Subjects: nanocrystal -- quantum engineering -- photonic crystal -- UV-C -- molecular beam epitaxy -- LED -- laser; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac2918
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We present an overview of some recent advances of nanoscale and quantum engineering of III-nitride heterostructures that are relevant for the development of high efficiency ultraviolet (UV)-C and far UV-C optoelectronic devices, including light emitting diodes and laser diodes. We show that relatively efficient p-type conduction of AlN and Al-rich AlGaN can be achieved in nearly dislocation-free nanostructures, or through in situ Fermi-level control during the growth of epilayers. High luminescence emission efficiency in the deep UV can be realized by exploiting strong quantum confinement of charge carriers, through either the formation of quantum dot-like nanoclusters or monolayer quantum wells. Moreover, the three-dimensional quantum confinement of charge carriers can drastically reduce the transparency carrier density of ultrawide bandgap semiconductors, leading to electrically pumped mid and deep UV laser diodes with ultralow threshold operation.