Controllable Schottky barriers by ferroelectric switching in graphene/In2Te3 heterostructures. (6th October 2021)

• Record Type: Journal Article
• Authors: Jing, Tao; Liang, Dongmei; Huang, Xincheng; Deng, Mingsen; Cai, Shaohong; Liu, Wenjiang
• Is Part Of: Journal of physics. Volume 55:Number 1(2022)
• Publication Date: 2021-10-06
• Subjects: vdWs heterostructures -- ferroelectric materials -- electronic structures -- Schottky barrier; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ac2336
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Van der Waals (vdWs) heterostructures have attracted significant research attention due to their tunable electronic structures and potential for device applications. In this study, the interfacial properties of graphene/In2 Te3 heterostructures are systematically explored by employing first principles calculations. It is revealed that the electronic structures of graphene and In2 Te3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be realized for the graphene/In2 Te3 heterostructures by switching the polarity of In2 Te3 . The findings reported in this study are not only vital for basic theoretical research, but also provide a feasible strategy to control the Schottky barriers for vdWs heterostructures.