Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode. (14th March 2015)

• Record Type: Journal Article
• Authors: Watanabe, Akio; Kumazaki, Yusuke; Yatabe, Zenji; Sato, Taketomo
• Is Part Of: ECS Electrochemistry Letters. Volume 4:Number 5(2015)
• Page Start: H11
• Page End: H13
• Publication Date: 2015-03-14
• Subjects: back-side illumination -- GaN -- porous structure
• DOI: 10.1149/2.0031505eel
• Languages: English
• ISSNs: 2162-8726

Abstract

Abstract : We investigated the structural features of gallium-nitride-porous structures formed using the photo-assisted electrochemical process in the back-side illumination (BSI) mode. The pore diameter and depth were strongly affected by the direction of illumination, where higher controllability was achieved compared with front-side illumination. The spectroscopic measurements revealed that illumination with photon energy below the bulk bandgap plays an important role in pore formation. We propose a formation model by considering the Franz-Keldysh effect that can consistently explain the obtained experimental data in which anodic etching occurs only at the pore tips under the high electric field induced in the depletion region.