Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditions. (29th October 2019)

• Record Type: Journal Article
• Authors: Mattinen, Miika; King, Peter J; Popov, Georgi; Hämäläinen, Jani; Heikkilä, Mikko J; Leskelä, Markku; Ritala, Mikko
• Is Part Of: 2D materials. Volume 7:Number 1(2020)
• Publication Date: 2019-10-29
• Subjects: 2D materials -- TMDCs -- vdW epitaxy -- atomic layer deposition; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/ab4c09
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: Van der Waals epitaxy holds great promise in producing high-quality films of 2D materials. However, scalable van der Waals epitaxy processes operating at low temperatures and low vacuum conditions are lacking. Herein, atomic layer deposition is used for van der Waals epitaxy of continuous multilayer films of 2D materials HfS2, MoS2, SnS2, and ZrS2 on muscovite mica and PbI2 on sapphire at temperatures between 75 °C and 400 °C. For the metal sulfides on mica, the main epitaxial relation is MS2 || mica. Some domains rotated by 30° are also observed corresponding to the MS2 || mica alignment. In both cases, the presence of domains rotated by 60° (mirror twins) is also expected. For PbI2 on sapphire, the epitaxial relation is PbI2 || Al2 O3 with no evidence of 30° domains. For all of the studied systems there is relatively large in-plane mosaicity and in the PbI2 /Al2 O3 system some non-epitaxial domains are also observed. The study presents first steps of an approach towards a scalable and semiconductor industry compatible van der Waals epitaxy method.