Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process (Adv. Electron. Mater. 10/2021). (11th October 2021)

• Record Type: Journal Article
• Authors: Jeong, Jaejoong; Kim, Min Ju; Hwang, Wan Sik; Cho, Byung Jin
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 10(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-11
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202170048
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Low‐Power Wearable Electronics In article number 2100375, Byung Jin Cho and co‐workers demonstrated a novel copolymer‐based flexible ReRAM device with low switching power and forming‐free characteristics for low‐power wearable electronics. The copolymer is composed of 2‐hydroxyethyl methacrylate (HEMA) and 1, 3, 5 trivinyltrimethyl‐cyclotrisiloxane (V3D3), and is fabricated via initiated Chemical Vapor Deposition (iCVD), a vapor‐phase synthesis.