Hexagonal Si−Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature. Issue 57 (16th September 2021)

• Record Type: Journal Article
• Authors: Serghiou, George; Odling, Nicholas; Reichmann, Hans Josef; Ji, Gang; Koch‐Müller, Monika; Frost, Daniel J.; Wright, Jonathan P.; Boehler, Reinhard; Morgenroth, Wolfgang
• Is Part Of: Chemistry. Volume 27:Issue 57(2021)
• Page Start: 14217
• Page End: 14224
• Publication Date: 2021-09-16
• Subjects: alloys -- diffraction -- high-pressure and -temperature chemistry -- materials synthesis -- reactivity -- solid solutions; Chemistry -- Periodicals; 540
• DOI: 10.1002/chem.202102595
• Languages: English
• ISSNs: 0947-6539

Abstract

Abstract: Multi‐anvil and laser‐heated diamond anvil methods have been used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500–1800 K, respectively. Synchrotron angle dispersive X‐ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge−Si solid solutions ( P 63 / mmc ). Taken together, the multi‐anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge−Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge−Si solid solution family, and is of interest for optoelectronic applications. Abstract : Maybe diamonds aren′t forever : Cubic diamond ( Fd 3 ‾ m) silicon has been the material driver for electronics from the onset. In that structure, however, it absorbs and emits light inefficiently and offers no compositional tunability of properties. Both issues have been addressed by creating bulk GeSi solid solutions under pressure that are recovered in a different cubic structure ( la 3 ‾ ). This structure now transforms to a tunable hexagonal one that may not suffer from silicon's deficiencies.