Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials (Adv. Electron. Mater. 10/2021). (11th October 2021)

• Record Type: Journal Article
• Authors: Choi, Min Sup; Lee, Myeongjin; Ngo, Tien Dat; Hone, James; Yoo, Won Jong
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 10(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-11
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202170045
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Field‐Effect Transistor Chemical‐free and clean doping methods for 2D semiconducting materials are developed by Min Sup Choi, Won Jong Yoo, and co‐workers in article number 2100449 . The p‐ and n‐doping in 2D field‐effect transistors are observed by annealing and e‐beam irradiation, attributed to the absorption of oxygen molecules and charge trapping at the interfaces, respectively.