Effect of Bias Voltage on Substrate for the Structure and Electrical Properties of Y:HfO2 Thin Films Deposited by Reactive Magnetron Co‐Sputtering. (18th July 2021)

• Record Type: Journal Article
• Authors: Zhang, Weiqi; Zhou, Dayu; Sun, Nana; Wang, Jingjing; Li, Shuaidong
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 10(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-07-18
• Subjects: leakage current -- roughness -- substrate bias -- Y:HfO 2; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202100488
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: HfO2 thin film has been widely studied as the most promising candidate material for microelectronic devices. However, low leakage current density is the prerequisite for the excellent performance of devices. Therefore, effects of substrate bias duty ratio and frequency on the roughness and leakage current density are studied for the Y:HfO2 thin films deposited by reactive magnetron co‐sputtering method. The results illustrate that the substrate bias duty ratio and frequency influence the leakage current density through grain size and roughness of films. An appropriate substrate bias is beneficial to the densification of films and the reduction of leakage current. When the substrate bias duty cycle is 30.1% at the frequency of 19.7 kHz, the roughness and leakage current density of films are reduced to 0.4 nm and 8.8 × 10 −8 A cm −2, respectively. Abstract : The effects of substrate bias duty ratio and frequency on the roughness and leakage current density are studied for Y:HfO2 films. The bias voltage influences the grain size, roughness, and leakage current density of films. The leakage current density decreases to 8.8 × 10 −8 A cm −2 with an appropriate bias voltage.