Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process. (19th August 2021)

• Record Type: Journal Article
• Authors: Jeong, Jaejoong; Kim, Min Ju; Hwang, Wan Sik; Cho, Byung Jin
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 10(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-08-19
• Subjects: copolymers -- initiated chemical vapor deposition -- low power -- resistive random access memory -- soft electronics; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202100375
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: One of the essential components in this era of the Internet of Things (IoT) and wearable technologies, is a flexible and high performance resistive random access memory (ReRAM) device. In this paper, the authors propose a new copolymer‐based ReRAM device that is realized using an initiated chemical vapor deposition (iCVD) process. The 7‐nm‐thick copolymer ReRAM device exhibits endurance properties as high as 10 5 and switching power as low as 438 µW. The strong endurance of the copolymer‐based ReRAM device originates from the properties of the robust poly‐1, 3, 5‐trivinyl‐trimethyl‐cyclotrisiloxane dielectric film, while its low on‐current at the operating voltage is attributed to the properties of the poly‐2‐hydroxyethyl methacrylate dielectric with the Al electrode. The proposed ReRAM also has the additional advantage of forming‐free switching characteristics. Abstract : Polymer based resistive random access memory (ReRAM) has been spotlighted as an alternative memory device. In this report, a novel copolymer‐based flexible ReRAM device with low switching power and forming‐free characteristics is demonstrated for low‐power wearable electronics. The copolymer is composed of 2‐hydroxyethyl methacrylate (HEMA) and 1, 3, 5‐trivinyl‐trimethyl‐cyclotrisiloxane (V3D3), and is fabricated via initiated chemical vapor deposition (iCVD), a vapor‐phase synthesis.