Cover Feature: Hexagonal Si−Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature (Chem. Eur. J. 57/2021). Issue 57 (28th September 2021)

• Record Type: Journal Article
• Authors: Serghiou, George; Odling, Nicholas; Reichmann, Hans Josef; Ji, Gang; Koch‐Müller, Monika; Frost, Daniel J.; Wright, Jonathan P.; Boehler, Reinhard; Morgenroth, Wolfgang
• Is Part Of: Chemistry. Volume 27:Issue 57(2021)
• Page Start: 14141
• Page End: 14141
• Publication Date: 2021-09-28
• Subjects: alloys -- diffraction -- high-pressure and -temperature chemistry -- materials synthesis -- reactivity -- solid solutions; Chemistry -- Periodicals; 540
• DOI: 10.1002/chem.202103432
• Languages: English
• ISSNs: 0947-6539

Abstract

Abstract : There is a pressing engineering need to produce hexagonal SiGe, that is untemplated, to be able to develop optoelectronic devices with hex‐SiGe and Si integrated on the same chip. We have contributed the timely, broad‐interest advance of producing a bulk hexagonal SiGe landscape and explain how and under what conditions each Si–Ge composition becomes hexagonal. Moreover, the ability to synthesize different hexagonal polytypes affords further tailoring of optoelectronic properties. More information can be found in the Full Paper by G. Serghiou et al. (DOI: 10.1002/chem.202102595 ).