Comparative Study of AlGaN/AlN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Ni/Au Gate Electrode. (5th October 2021)

• Record Type: Journal Article
• Authors: Niu, Jing-Shiuan; Tsai, Li-An; Shao, Wei-Che; Tsai, Jung-Hui; Liu, Wen-Chau
• Is Part Of: ECS journal of solid state science and technology. Volume 10:Number 10(2021)
• Publication Date: 2021-10-05
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac2783
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this article, Al0.28 Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with Ni/Au gate metal electrode are demonstrated. NiO or Al2 O3 gate oxide layer is employed as a gate dielectric layer effectively decreases the gate leakage current, enhances drain current density, and transconductance, simultaneously. As compared with the metal-semiconductor (MS) Schottky-gate device, excellent characteristics are achieved for the MOS-HEMT with NiO (Al2 O3 ) gate oxide layer, which include maximum drain-to-source saturation current density of 626.5 (692.0) mA mm −1, maximum transconductance of 87.6 (94.2) mS mm −1, gate-to-drain leakage current of 1.47 × 10 −7 (8.21 × 10 −11 ) mA mm −1, threshold voltage of −3.48 (−3.45) V, gate voltage swing of 2.88 (3.08) V, respectively. Experimentally, the MOS-HEMT with an Al2 O3 gate oxide layer shows good potential for signal amplification and circuit applications.