Cite
HARVARD Citation
Bae, H. et al. (2021). Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor. Solid-state electronics. p. . [Online].
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Bae, H. et al. (2021). Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor. Solid-state electronics. p. . [Online].