Cite
HARVARD Citation
Lin, C. et al. (2021). Electrically tunable bandgaps for g-ZnO/ZnX (X = S, Se, Te) 2D semiconductor bilayers. Vacuum. p. . [Online].
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Lin, C. et al. (2021). Electrically tunable bandgaps for g-ZnO/ZnX (X = S, Se, Te) 2D semiconductor bilayers. Vacuum. p. . [Online].