Cite
HARVARD Citation
Agopian, P. et al. (2021). Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C. Solid-state electronics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Agopian, P. et al. (2021). Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C. Solid-state electronics. p. . [Online].