Phase slip lines in superconducting few-layer NbSe2 crystals. (22nd March 2019)

• Record Type: Journal Article
• Authors: Paradiso, Nicola; Nguyen, Anh-Tuan; Enzo Kloss, Karl; Strunk, Christoph
• Is Part Of: 2D materials. Volume 6:Number 2(2019)
• Publication Date: 2019-03-22
• Subjects: NbSe2 -- phase slip lines -- phase slip centers -- 2D superconductivity -- excess current -- layered superconductor -- critical current; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/ab0bcc
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: We show the results of two-terminal and four-terminal transport measurements on few-layer NbSe2 devices at large current bias. In all the samples measured, transport characteristics at high bias are dominated by a series of resistance jumps due to nucleation of phase slip lines, the two dimensional analogue of phase slip centers. In point contact devices the relatively simple and homogeneous geometry enables a quantitative comparison with the model of Skocpol, Beasley and Tinkham. In extended crystals the nucleation of a single phase slip line can be induced by mechanical stress of a region whose width is comparable to the charge imbalance equilibration length.