Molecular beam epitaxial growth of dilute nitride GaNAs and GaInNAs nanowires. (26th March 2019)

• Record Type: Journal Article
• Authors: Yukimune, M; Fujiwara, R; Mita, T; Tsuda, N; Natsui, J; Shimizu, Y; Jansson, M; Balagula, R; Chen, W M; Buyanova, I A; Ishikawa, F
• Is Part Of: Nanotechnology. Volume 30:Number 24(2019)
• Publication Date: 2019-03-26
• Subjects: nanowire -- GaAs -- dilute nitrides -- molecular beam epitaxy; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ab0974
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We report the growth of dilute nitride GaNAs and GaInNAs core-multishell nanowires (NWs) using molecular beam epitaxy assisted by a plasma source. Using the self-catalyst vapor–liquid–solid growth mode, these NWs were grown on Si(111) and silicon on insulator substrates. The GaNAs and GaInNAs shells contain nitrogen up to 3%. Axial cross-sectional scanning transmission electron microscopy measurements and energy-dispersive x-ray spectrometry confirm the formation of the core-multishell NW structure. We obtained high-quality GaNAs NWs with nitrogen compositions up to 2%. On the other hand, GaNAs containing 3% nitrogen, and GaInNAs NWs, show distorted structures; moreover, the optical emissions seem to be related to defects. Further optimisations of the growth conditions will improve these properties, promising future applications in nanoscale optoelectronics.